ON PROGNOSIS OF GROWTH OF FILMS FROM GAS PHASE WITH ACCOUNT NATURAL CONVECTION AND CHANGES IN THE RATE OF CHEMICAL INTERACTION BETWEEN MATERIALS
E. L. PANKRATOV *
Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia and Nizhny Novgorod State Technical University, 24 Minin Street, Nizhny Novgorod, 603950, Russia.
*Author to whom correspondence should be addressed.
Abstract
In this paper, using the recently introduced analytical approach for the analysis of mass and heat transfer during film growth in reactors for epitaxy from the gas phase, these processes are analyzed taking into account natural convection and possibility of changing the rate of chemical interaction between reagents. As a result of the analysis the conditions under which the homogeneity of the grown epitaxial layers increases with a change in the values of the parameters of the growth process were formulated. Another actual result of this paper is development of analytical approach for prognosis of mass and heat transport with account spatial and temporal dependences of parameters of considered processes and at the same time with account their nonlinearity.
Keywords: Gas phase epitaxy, prognosis of epitaxy, taking into account natural convection and chemical reaction, analytical approach for modeling of mass and heat transport.
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